IRFBA90N20DPBF
IRFBA90N20DPBF
Part Number IRFBA90N20DPBF Description MOSFET N-CH 200V 98A SUPER-220 Package / Case Super-220™-3 (Straight Leads)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 200V 98A (Tc) 650W (Tc) Through Hole SUPER-220™ (TO-273AA)
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IRFBA90N20DPBF - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFBA90N20DPbF Standard Package 50 Manufacturer Infineon Technologies Series HEXFET® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 98A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 23mOhm @ 59A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6080pF @ 25V FET Feature - Power Dissipation (Max) 650W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package SUPER-220™ (TO-273AA) Package / Case Super-220™-3 (Straight Leads)
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