IXFH320N10T2
IXFH320N10T2
Part Number IXFH320N10T2
Manufacturer IXYS
Description MOSFET N-CH 100V 320A TO-247
Package / Case TO-247-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 100V 320A (Tc) 1000W (Tc) Through Hole TO-247AD (IXFH)
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IXFH320N10T2 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXF(H,T)320N10T2
Standard Package 30
Manufacturer IXYS
Series HiPerFET™, TrenchT2™
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 320A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 430nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 26000pF @ 25V
FET Feature -
Power Dissipation (Max) 1000W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AD (IXFH)
Package / Case TO-247-3
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