Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXFH320N10T2

IXFH320N10T2

IXFH320N10T2

Part NumberIXFH320N10T2

ManufacturerIXYS

DescriptionMOSFET N-CH 100V 320A TO-247

DatasheetIXF(H,T)320N10T2

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 320A (Tc) 1000W (Tc) Through Hole TO-247AD (IXFH)

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IXFH320N10T2 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXF(H,T)320N10T2
Standard Package	30
Manufacturer	IXYS
Series	HiPerFET™, TrenchT2™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	320A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	430nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	26000pF @ 25V
FET Feature	-
Power Dissipation (Max)	1000W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AD (IXFH)
Package / Case	TO-247-3

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