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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_024
Standard Package 3000
Manufacturer Vishay Siliconix
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 640pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IPB60R165CPATMA1
Infineon Technologies, N-Channel 600V 21A (Tc) 192W (Tc) Surface Mount PG-TO263-3-2, CoolMOS™
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BSP126,135
Nexperia USA Inc., N-Channel 250V 375mA (Ta) 1.5W (Ta) Surface Mount SC-73,
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FCD600N60Z
ON Semiconductor, N-Channel 600V 7.4A (Tc) 89W (Tc) Surface Mount D-Pak, SuperFET® II
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SQP10250E_GE3
Vishay Siliconix, N-Channel 250V 53A (Tc) 250W (Tc) Through Hole TO-220AB, Automotive, AEC-Q101, TrenchFET®
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PSMN5R0-30YL,115
Nexperia USA Inc., N-Channel 30V 91A (Tc) 61W (Tc) Surface Mount LFPAK56, Power-SO8,
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IXFP22N65X2
IXYS, N-Channel 650V 22A (Tc) 390W (Tc) Through Hole TO-220, HiPerFET™
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DMN10H099SFG-7
Diodes Incorporated, N-Channel 100V 4.2A (Ta) 980mW (Ta) Surface Mount PowerDI3333-8,
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SIHP35N60E-GE3
Vishay Siliconix, N-Channel 600V 32A (Tc) 250W (Tc) Through Hole TO-220AB,
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CPH3448-TL-W
ON Semiconductor, N-Channel 30V 4A (Ta) 1W (Ta) Surface Mount 3-CPH,
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IPW60R055CFD7XKSA1
Infineon Technologies, N-Channel 600V 38A (Tc) 178W (Tc) Through Hole PG-TO247-3, OptiMOS™
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SIRA20DP-T1-RE3
Vishay Siliconix, N-Channel 25V 81.7A (Ta), 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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IPD95R2K0P7ATMA1
Infineon Technologies, N-Channel 950V 4A (Tc) 37W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7
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