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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_120
Standard Package 75
Manufacturer Vishay Siliconix
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN1R6-30BL,118
Nexperia USA Inc., N-Channel 30V 100A (Tc) 306W (Tc) Surface Mount D2PAK,
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TPW1R306PL,L1Q
Toshiba Semiconductor and Storage, N-Channel 60V 260A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance, U-MOSIX-H
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IRFSL4010PBF
Infineon Technologies, N-Channel 100V 180A (Tc) 375W (Tc) Through Hole TO-262, HEXFET®
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STL7N60M2
STMicroelectronics, N-Channel 600V 5A (Tc) 4W (Ta), 67W (Tc) Surface Mount PowerFLAT™ (5x5), MDmesh™
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SUD20N10-66L-GE3
Vishay Siliconix, N-Channel 100V 16.9A (Tc) 2.1W (Ta), 41.7W (Tc) Surface Mount TO-252, TrenchFET®
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NTMFS4927NT1G
ON Semiconductor, N-Channel 30V 7.9A (Ta), 38A (Tc) 920mW (Ta), 20.8W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
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NTB45N06LT4G
ON Semiconductor, N-Channel 60V 45A (Ta) 2.4W (Ta), 125W (Tj) Surface Mount D2PAK,
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BST82,215
Nexperia USA Inc., N-Channel 100V 190mA (Ta) 830mW (Tc) Surface Mount TO-236AB, TrenchMOS™
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STW13N80K5
STMicroelectronics, N-Channel 800V 12A (Tc) 190W (Tc) Through Hole TO-247, SuperMESH5™
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IXFX100N65X2
IXYS, N-Channel 650V 100A (Tc) 1040W (Tc) Through Hole PLUS247™-3, HiPerFET™
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SI3440DV-T1-E3
Vishay Siliconix, N-Channel 150V 1.2A (Ta) 1.14W (Ta) Surface Mount 6-TSOP, TrenchFET®
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FDD6N20TM
ON Semiconductor, N-Channel 200V 4.5A (Tc) 40W (Tc) Surface Mount D-Pak, UniFET™
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