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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_120
Standard Package 75
Manufacturer Vishay Siliconix
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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ON Semiconductor, N-Channel 100V 6.8A (Tc) 14.9W (Tc) Surface Mount TO-252, (D-Pak), PowerTrench®
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BSC034N06NSATMA1
Infineon Technologies, N-Channel 60V 100A (Tc) 2.5W (Ta), 74W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™
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CSD19532KTT
Texas Instruments, N-Channel 100V 200A (Ta) 250W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™
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IRFP3703PBF
Infineon Technologies, N-Channel 30V 210A (Tc) 3.8W (Ta), 230W (Tc) Through Hole TO-247AC, HEXFET®
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BUK7214-75B,118
Nexperia USA Inc., N-Channel 75V 70A (Tc) 158W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™
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DMN2230UQ-7
Diodes Incorporated, N-Channel 20V 2A (Ta) 600mW (Ta) Surface Mount SOT-23,
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SIHP20N50E-GE3
Vishay Siliconix, N-Channel 500V 19A (Tc) 179W (Tc) Through Hole TO-220AB,
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STP20NK50Z
STMicroelectronics, N-Channel 500V 17A (Tc) 190W (Tc) Through Hole TO-220AB, SuperMESH™
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SUP10250E-GE3
Vishay Siliconix, N-Channel 250V 63A (Tc) 375W (Tc) Through Hole TO-220AB, ThunderFET®
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STF26NM60N
STMicroelectronics, N-Channel 600V 20A (Tc) 35W (Tc) Through Hole TO-220FP, MDmesh™ II
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BUK7Y53-100B,115
Nexperia USA Inc., N-Channel 100V 24.8A (Tc) 85W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
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