IRF6810STRPBF

Part NumberIRF6810STRPBF

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRF6810STR (1) PBF
Standard Package	1
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Cut Tape (CT)
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	16A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.2mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	2.1V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 4.5V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	1038pF @ 13V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 20W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DIRECTFET S1
Package / Case	DirectFET™ Isometric S1

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