STH185N10F3-6
STH185N10F3-6
Part Number STH185N10F3-6 Description MOSFET N-CH 100V 180A H2PAK-6 Package / Case TO-263-7, D²Pak (6 Leads + Tab)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6
To learn about the specification of STH185N10F3-6, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add STH185N10F3-6 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of STH185N10F3-6.
We are offering STH185N10F3-6 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
STH185N10F3-6 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STH185N10F3-6 Standard Package 1000 Manufacturer STMicroelectronics Series Automotive, AEC-Q101, STripFET™ F3 Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.5mOhm @ 60A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 114.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6665pF @ 25V FET Feature - Power Dissipation (Max) 315W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package H2PAK-6 Package / Case TO-263-7, D²Pak (6 Leads + Tab)
STH185N10F3-6 - Related ProductsMore >>
IRFZ44NPBF Infineon Technologies, N-Channel 55V 49A (Tc) 94W (Tc) Through Hole TO-220AB, HEXFET®
View
IXFA8N85XHV IXYS, N-Channel 850V 8A (Tc) 200W (Tc) Surface Mount TO-263HV, HiPerFET™
View
SIHP11N80E-GE3 Vishay Siliconix, N-Channel 800V 12A (Tc) 179W (Tc) Through Hole TO-220AB,
View
SI3440DV-T1-GE3 Vishay Siliconix, N-Channel 150V 1.2A (Ta) 1.14W (Ta) Surface Mount 6-TSOP, TrenchFET®
View
IRFS3207TRLPBF Infineon Technologies, N-Channel 75V 170A (Tc) 300W (Tc) Surface Mount D2PAK, HEXFET®
View
NTMFS4C35NT1G ON Semiconductor, N-Channel 30V 12.4A (Ta) 780mW (Ta), 33W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
View
VN2210N3-G Microchip Technology, N-Channel 100V 1.2A (Tj) 740mW (Tc) Through Hole TO-92-3,
View
SIRA12DP-T1-GE3 Vishay Siliconix, N-Channel 30V 25A (Tc) 4.5W (Ta), 31W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
TSM60NB190CZ C0G Taiwan Semiconductor Corporation, N-Channel 600V 18A (Tc) 33.8W (Tc) Through Hole TO-220,
View
BS170-D75Z ON Semiconductor, N-Channel 60V 500mA (Ta) 830mW (Ta) Through Hole TO-92-3,
View
TK39N60W,S1VF Toshiba Semiconductor and Storage, N-Channel 600V 38.8A (Ta) 270W (Tc) Through Hole TO-247, DTMOSIV
View
IRL6342TRPBF Infineon Technologies, N-Channel 30V 9.9A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
STH185N10F3-6 - Tags
English
