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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK7560-100A, BUK7660-100A
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1377pF @ 25V
FET Feature -
Power Dissipation (Max) 106W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STD10NM60N
STMicroelectronics, N-Channel 600V 10A (Tc) 70W (Tc) Surface Mount DPAK, MDmesh™ II
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STW20NM60
STMicroelectronics, N-Channel 600V 20A (Tc) 192W (Tc) Through Hole TO-247-3, MDmesh™
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STP33N65M2
STMicroelectronics, N-Channel 650V 24A (Tc) 190W (Tc) Through Hole TO-220, MDmesh™ M2
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PHB20N06T,118
Nexperia USA Inc., N-Channel 55V 20.3A (Tc) 62W (Tc) Surface Mount D2PAK, TrenchMOS™
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IRF60B217
Infineon Technologies, N-Channel 60V 60A (Tc) 83W (Tc) Through Hole TO-220AB, StrongIRFET™
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SIR668DP-T1-RE3
Vishay Siliconix, N-Channel 100V 95A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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BSC026N08NS5ATMA1
Infineon Technologies, N-Channel 80V 23A (Ta), 100A (Tc) 2.5W (Ta), 156W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™
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RD3U060CNTL1
Rohm Semiconductor, N-Channel 250V 6A (Tc) 52W (Tc) Surface Mount TO-252,
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IRFP350LCPBF
Vishay Siliconix, N-Channel 400V 16A (Tc) 190W (Tc) Through Hole TO-247-3,
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DMN53D0LQ-7
Diodes Incorporated, N-Channel 50V 500mA (Ta) 370mW (Ta) Surface Mount SOT-23, Automotive, AEC-Q101
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BSC030N08NS5ATMA1
Infineon Technologies, N-Channel 80V 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™
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SIHG20N50C-E3
Vishay Siliconix, N-Channel 500V 20A (Tc) 250W (Tc) Through Hole TO-247AC,
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