IRF200P223
IRF200P223
Part Number IRF200P223
Description MOSFET N-CH 200V 100A TO247AC
Package / Case TO-247-3
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Lead Time To be Confirmed
Detailed Description N-Channel 200V 100A (Tc) 313W (Tc) Through Hole TO-247AC
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IRF200P223 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRF200P223
Standard Package 400
Manufacturer Infineon Technologies
Series StrongIRFET™
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 102nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5094pF @ 50V
FET Feature -
Power Dissipation (Max) 313W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
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