IPN65R1K5CEATMA1
IPN65R1K5CEATMA1
Part Number IPN65R1K5CEATMA1 Description CONSUMER Package / Case TO-261-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 5.2A (Tc) 5W (Tc) Surface Mount PG-SOT223
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IPN65R1K5CEATMA1 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPN65R1K5CE Standard Package 1 Manufacturer Infineon Technologies Series CoolMOS™ CE Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 5.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.5Ohm @ 1A, 10V Vgs(th) (Max) @ Id 3.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 225pF @ 100V FET Feature - Power Dissipation (Max) 5W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT223 Package / Case TO-261-3
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