IPB60R099C7ATMA1
IPB60R099C7ATMA1
Part Number IPB60R099C7ATMA1 Description MOSFET N-CH 650V 22A TO263-3 Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 22A (Tc) 110W (Tc) Surface Mount PG-TO263-3
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IPB60R099C7ATMA1 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB60R099C7 Standard Package 1 Manufacturer Infineon Technologies Series CoolMOS™ C7 Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 22A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 99mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id 4V @ 490µA Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1819pF @ 400V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-3 Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
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