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IPB60R099C7ATMA1

IPB60R099C7ATMA1

Part NumberIPB60R099C7ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 650V 22A TO263-3

DatasheetIPB60R099C7

Package / CaseTO-263-4, D²Pak (3 Leads + Tab), TO-263AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 22A (Tc) 110W (Tc) Surface Mount PG-TO263-3

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IPB60R099C7ATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPB60R099C7
Standard Package	1
Manufacturer	Infineon Technologies
Series	CoolMOS™ C7
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	99mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id	4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1819pF @ 400V
FET Feature	-
Power Dissipation (Max)	110W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3
Package / Case	TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

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