IPB60R099C7ATMA1
IPB60R099C7ATMA1
Part Number IPB60R099C7ATMA1
Description MOSFET N-CH 650V 22A TO263-3
Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
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Lead Time To be Confirmed
Detailed Description N-Channel 650V 22A (Tc) 110W (Tc) Surface Mount PG-TO263-3
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IPB60R099C7ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB60R099C7
Standard Package 1
Manufacturer Infineon Technologies
Series CoolMOS™ C7
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id 4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1819pF @ 400V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
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