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SI1070X-T1-GE3

SI1070X-T1-GE3

Part NumberSI1070X-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 1.2A SOT563F

DatasheetSi1070X

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 236mW (Ta) Surface Mount SC-89-6

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SI1070X-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si1070X
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	99mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id	1.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.3nC @ 5V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	385pF @ 15V
FET Feature	-
Power Dissipation (Max)	236mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-89-6
Package / Case	SOT-563, SOT-666

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