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IPDD60R102G7XTMA1

IPDD60R102G7XTMA1

Part NumberIPDD60R102G7XTMA1

ManufacturerInfineon Technologies

DescriptionMOSFET NCH 650V 66A PG-HDSOP-10

DatasheetIPDD60R102G7

Package / Case10-PowerSOP Module

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 23A (Tc) 139W (Tc) Surface Mount PG-HDSOP-10-1

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IPDD60R102G7XTMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPDD60R102G7
Standard Package	1
Manufacturer	Infineon Technologies
Series	CoolMOS™ G7
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	102mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id	4V @ 390µA
Gate Charge (Qg) (Max) @ Vgs	34nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1320pF @ 400V
FET Feature	-
Power Dissipation (Max)	139W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HDSOP-10-1
Package / Case	10-PowerSOP Module

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IPDD60R102G7XTMA1 - Tags

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