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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB144N12N3 G,IPx147N12N3 G Standard Package 1000 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 120V Current - Continuous Drain (Id) @ 25°C 56A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 14.4mOhm @ 56A, 10V Vgs(th) (Max) @ Id 4V @ 61µA Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3220pF @ 60V FET Feature - Power Dissipation (Max) 107W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPW60R099P7XKSA1 Infineon Technologies, N-Channel 600V 31A (Tc) 117W (Tc) Through Hole PG-TO247-3, CoolMOS™ P7
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FDD16AN08A0 ON Semiconductor, N-Channel 75V 9A (Ta), 50A (Tc) 135W (Tc) Surface Mount DPAK, UltraFET™
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IRF7456TRPBF Infineon Technologies, N-Channel 20V 16A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
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STD16N60M2 STMicroelectronics, N-Channel 600V 12A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ M2
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IRFH7004TRPBF Infineon Technologies, N-Channel 40V 100A (Tc) 156W (Tc) Surface Mount 8-PQFN (5x6), HEXFET®, StrongIRFET™
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APT28M120L Microsemi Corporation, N-Channel 1200V 29A (Tc) 1135W (Tc) Through Hole TO-264 [L], POWER MOS 8™
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ATP405-TL-H ON Semiconductor, N-Channel 100V 40A (Ta) 70W (Tc) Surface Mount ATPAK,
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BSC011N03LSATMA1 Infineon Technologies, N-Channel 30V 37A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
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STP24NM60N STMicroelectronics, N-Channel 600V 17A (Tc) 125W (Tc) Through Hole TO-220, MDmesh™ II
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IRLB8743PBF Infineon Technologies, N-Channel 30V 78A (Tc) 140W (Tc) Through Hole TO-220AB, HEXFET®
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PMV40UN2R Nexperia USA Inc., N-Channel 30V 3.7A (Ta) 490mW (Ta) Surface Mount TO-236AB,
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SIHA15N65E-GE3 Vishay Siliconix, N-Channel 650V 15A (Tc) 34W (Tc) Through Hole TO-220 Full Pack,
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