FCP165N65S3
FCP165N65S3
Part Number FCP165N65S3
Description SF3 650V 165MOHM E TO220
Package / Case TO-220-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 650V 19A (Tc) 154W (Tc) Through Hole TO-220-3
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FCP165N65S3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FCP165N65S3
Standard Package 800
Manufacturer ON Semiconductor
Series SuperFET® III
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 165mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 400V
FET Feature -
Power Dissipation (Max) 154W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
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