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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet 2N7002BK Datasheet
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
FET Feature -
Power Dissipation (Max) 370mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
FDMS86252
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IAUT260N10S5N019ATMA1
Infineon Technologies, N-Channel 100V 260A (Tc) 300W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™-5
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IRLS3034TRLPBF
Infineon Technologies, N-Channel 40V 195A (Tc) 375W (Tc) Surface Mount D2PAK, HEXFET®
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NVMFS4C05NT3G
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PSMN4R0-60YS,115
Nexperia USA Inc., N-Channel 60V 74A (Tc) 130W (Tc) Surface Mount LFPAK56, Power-SO8,
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STB55NF06LT4
STMicroelectronics, N-Channel 60V 55A (Tc) 95W (Tc) Surface Mount D2PAK, STripFET™ II
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FDP2710
ON Semiconductor, N-Channel 250V 50A (Tc) 260W (Tc) Through Hole TO-220-3, PowerTrench®
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PSMN1R2-30YLC,115
Nexperia USA Inc., N-Channel 30V 100A (Tc) 215W (Tc) Surface Mount LFPAK56, Power-SO8,
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SIHP050N60E-GE3
Vishay Siliconix, N-Channel 600V 51A (Tc) 278W (Tc) Through Hole TO-220AB,
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FQA9N90C-F109
ON Semiconductor, N-Channel 900V 9A (Tc) 280W (Tc) Through Hole TO-3P, QFET®
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CSD18533Q5AT
Texas Instruments, N-Channel 60V 17A (Ta), 100A (Tc) 3.2W (Ta), 116W (Tc) Surface Mount 8-VSONP (5x6), NexFET™
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BUK6D23-40EX
Nexperia USA Inc., N-Channel 40V 8A (Ta), 19A (Tc) 2.3W (Ta), 15W (Tc) Surface Mount DFN2020MD-6, Automotive, AEC-Q101, TrenchMOS™
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