IPA65R280E6XKSA1
IPA65R280E6XKSA1
Part Number IPA65R280E6XKSA1
Description MOSFET N-CH 650V 13.8A TO220
Package / Case TO-220-3 Full Pack
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 650V 13.8A (Tc) 32W (Tc) Through Hole PG-TO220-FP
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IPA65R280E6XKSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPx65R280E6
Standard Package 500
Manufacturer Infineon Technologies
Series CoolMOS™
Packaging Tube
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 100V
FET Feature -
Power Dissipation (Max) 32W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Package / Case TO-220-3 Full Pack
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