FDMA86108LZ
FDMA86108LZ
Part Number FDMA86108LZ Description MOSFET N-CH 100V 2.2A 6MLP Package / Case 6-VDFN Exposed PadUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 2.2A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
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FDMA86108LZ - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDMA86108LZ Standard Package 1 Manufacturer ON Semiconductor Series PowerTrench® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 243mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 163pF @ 50V FET Feature - Power Dissipation (Max) 2.4W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-MicroFET (2x2) Package / Case 6-VDFN Exposed Pad
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