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SUD35N10-26P-E3


SUD35N10-26P-E3

Part NumberSUD35N10-26P-E3

Manufacturer

Description

Datasheet

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SUD35N10-26P-E3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Rds On (Max) @ Id, Vgs26mOhm @ 12A, 10V
Vgs(th) (Max) @ Id4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs47nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2000pF @ 12V
FET Feature-
Power Dissipation (Max)8.3W (Ta), 83W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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