SUD35N10-26P-E3
SUD35N10-26P-E3
Part Number SUD35N10-26P-E3 Description MOSFET N-CH 100V 35A TO252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 35A (Tc) 8.3W (Ta), 83W (Tc) Surface Mount TO-252
To learn about the specification of SUD35N10-26P-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SUD35N10-26P-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SUD35N10-26P-E3.
We are offering SUD35N10-26P-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SUD35N10-26P-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SUD35N10-26P Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7V, 10V Rds On (Max) @ Id, Vgs 26mOhm @ 12A, 10V Vgs(th) (Max) @ Id 4.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 12V FET Feature - Power Dissipation (Max) 8.3W (Ta), 83W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SUD35N10-26P-E3 - Related ProductsMore >>
IRF3315PBF Infineon Technologies, N-Channel 150V 23A (Tc) 94W (Tc) Through Hole TO-220AB, HEXFET®
View
STF28N60M2 STMicroelectronics, N-Channel 600V 24A (Tc) 30W (Tc) Through Hole TO-220FP, MDmesh™ II Plus
View
DMN65D8LFB-7 Diodes Incorporated, N-Channel 60V 260mA (Ta) 430mW (Ta) Surface Mount X1-DFN1006-3,
View
IRF830ALPBF Vishay Siliconix, N-Channel 500V 5A (Tc) 3.1W (Ta), 74W (Tc) Through Hole I2PAK,
View
IPB60R280P7ATMA1 Infineon Technologies, N-Channel 600V 12A (Tc) 53W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™ P7
View
AOSP32314 Alpha & Omega Semiconductor Inc., N-Channel 30V 14.5A (Ta) 3.1W (Ta) Surface Mount 8-SOIC,
View
STH175N4F6-2AG STMicroelectronics, N-Channel 40V 120A (Tc) 150W (Tc) Surface Mount H2Pak-2, Automotive, AEC-Q101, STripFET™ F6
View
FCP125N65S3R0 ON Semiconductor, N-Channel 650V 24A (Tc) 181W (Tc) Through Hole TO-220-3, SuperFET® III
View
SPD02N80C3ATMA1 Infineon Technologies, N-Channel 800V 2A (Tc) 42W (Tc) Surface Mount PG-TO252-3, CoolMOS™
View
DMT10H025SSS-13 Diodes Incorporated, N-Channel 100V 7.4A (Ta) 1.4W (Ta) Surface Mount 8-SO,
View
IRF840PBF Vishay Siliconix, N-Channel 500V 8A (Tc) 125W (Tc) Through Hole TO-220AB,
View
FDS6612A ON Semiconductor, N-Channel 30V 8.4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
SUD35N10-26P-E3 - Tags
English
