FQD10N20LTM
FQD10N20LTM
Part Number FQD10N20LTM Description MOSFET N-CH 200V 7.6A DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 200V 7.6A (Tc) 2.5W (Ta), 51W (Tc) Surface Mount TO-252, (D-Pak)
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FQD10N20LTM - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQD10N20L Standard Package 1 Manufacturer ON Semiconductor Series QFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 360mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 830pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 51W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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