SIDR392DP-T1-GE3
SIDR392DP-T1-GE3
Part Number SIDR392DP-T1-GE3 Description MOSFET N-CHAN 30V Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 82A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
To learn about the specification of SIDR392DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIDR392DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIDR392DP-T1-GE3.
We are offering SIDR392DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIDR392DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIDR390DP Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Gen IV Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 82A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.62mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 188nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 9530pF @ 15V FET Feature - Power Dissipation (Max) 6.25W (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8DC Package / Case PowerPAK® SO-8
SIDR392DP-T1-GE3 - Related ProductsMore >>
IXTK110N20L2 IXYS, N-Channel 200V 110A (Tc) 960W (Tc) Through Hole TO-264 (IXTK), Linear L2™
View
IRFB3207PBF Infineon Technologies, N-Channel 75V 170A (Tc) 330W (Tc) Through Hole TO-220AB, HEXFET®
View
NVD6495NLT4G-VF01 ON Semiconductor, N-Channel 100V 25A (Tc) 83W (Tc) Surface Mount DPAK,
View
FCP11N60F ON Semiconductor, N-Channel 600V 11A (Tc) 125W (Tc) Through Hole TO-220-3, SuperFET™
View
APL502LG Microsemi Corporation, N-Channel 500V 58A (Tc) 730W (Tc) Through Hole TO-264 [L],
View
FDMS86180 ON Semiconductor, N-Channel 100V 151A (Tc) 138W (Tc) Surface Mount Power56, PowerTrench®
View
TSM60NB190CM2 RNG Taiwan Semiconductor Corporation, N-Channel 600V 18A (Tc) 150.6W (Tc) Surface Mount TO-263 (D²Pak),
View
DMN30H4D0LFDE-7 Diodes Incorporated, N-Channel 300V 550mA (Ta) 630mW (Ta) Surface Mount U-DFN2020-6 (Type E),
View
IRFS4321TRLPBF Infineon Technologies, N-Channel 150V 85A (Tc) 350W (Tc) Surface Mount D2PAK, HEXFET®
View
BSZ067N06LS3GATMA1 Infineon Technologies, N-Channel 60V 14A (Ta), 20A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™
View
STW28N65M2 STMicroelectronics, N-Channel 650V 20A (Tc) 170W (Tc) Through Hole TO-247, MDmesh™ M2
View
IRF100P218XKMA1 Infineon Technologies, N-Channel 100V 556W (Tc) Through Hole TO-247AC, StrongIRFET™
View
SIDR392DP-T1-GE3 - Tags
English
