Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIDR392DP-T1-GE3

SIDR392DP-T1-GE3

SIDR392DP-T1-GE3

Part NumberSIDR392DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 30V

DatasheetSIDR390DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 82A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC

To learn about the specification of SIDR392DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIDR392DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIDR392DP-T1-GE3.
We are offering SIDR392DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIDR392DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIDR390DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	82A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	0.62mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	188nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	9530pF @ 15V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8DC
Package / Case	PowerPAK® SO-8

SIDR392DP-T1-GE3 - Related Products

	SSM6H19NU,LF	Toshiba Semiconductor and Storage, N-Channel 40V 2A (Ta) 1W (Ta) Surface Mount 6-UDFN (2x2), U-MOSVII-H	View
	IRFS7537TRLPBF	Infineon Technologies, N-Channel 60V 173A (Tc) 230W (Tc) Surface Mount D²PAK (TO-263AB), HEXFET®, StrongIRFET™	View
	STN3NF06L	STMicroelectronics, N-Channel 60V 4A (Tc) 3.3W (Tc) Surface Mount SOT-223, STripFET™ II	View
	AUIRF1404ZS	Infineon Technologies, N-Channel 40V 160A (Tc) 200W (Tc) Surface Mount D2PAK, HEXFET®	View
	PMCM4401UNEZ	Nexperia USA Inc., N-Channel 20V 400mW Surface Mount 4-WLCSP (2x2),	View
	IRFL024ZTRPBF	Infineon Technologies, N-Channel 55V 5.1A (Ta) 1W (Ta) Surface Mount SOT-223, HEXFET®	View
	FDC2512	ON Semiconductor, N-Channel 150V 1.4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	DMTH4007LPS-13	Diodes Incorporated, N-Channel 40V 15.5A (Ta), 100A (Tc) 2.7W (Ta), 150W (Tc) Surface Mount PowerDI5060-8,	View
	2N7002CK,215	Nexperia USA Inc., N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount TO-236AB, Automotive, AEC-Q101, TrenchMOS™	View
	MCU20N06A-TP	Micro Commercial Co, N-Channel 60V 20A Surface Mount D-Pak,	View
	PSMN8R5-100ESQ	Nexperia USA Inc., N-Channel 100V 100A (Tj) 263W (Tc) Through Hole I2PAK,	View
	FQT1N60CTF-WS	ON Semiconductor, N-Channel 600V 200mA (Tc) 2.1W (Tc) Surface Mount SOT-223-4, QFET®	View

SIDR392DP-T1-GE3 - Tags

SIDR392DP-T1-GE3 SIDR392DP-T1-GE3 PDF SIDR392DP-T1-GE3 datasheet SIDR392DP-T1-GE3 specification SIDR392DP-T1-GE3 image SIDR392DP-T1-GE3 India Renesas Electronics India SIDR392DP-T1-GE3 buy SIDR392DP-T1-GE3 SIDR392DP-T1-GE3 price SIDR392DP-T1-GE3 distributor SIDR392DP-T1-GE3 supplier SIDR392DP-T1-GE3 wholesales