Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8416DB-T2-E1

SI8416DB-T2-E1

SI8416DB-T2-E1

Part NumberSI8416DB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 8V 16A MICRO

DatasheetSI8416DB

Package / Case6-UFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 8V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

To learn about the specification of SI8416DB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8416DB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8416DB-T2-E1.
We are offering SI8416DB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8416DB-T2-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI8416DB
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	23mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26nC @ 4.5V
Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	1470pF @ 4V
FET Feature	-
Power Dissipation (Max)	2.77W (Ta), 13W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-Micro Foot™ (1.5x1)
Package / Case	6-UFBGA

SI8416DB-T2-E1 - Related Products

	BUK7Y12-40EX	Nexperia USA Inc., N-Channel 40V 52A (Tc) 65W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™	View
	SUM70090E-GE3	Vishay Siliconix, N-Channel 100V 50A (Tc) 125W (Tc) Surface Mount TO-263 (D2Pak), ThunderFET®	View
	SQM70060EL_GE3	Vishay Siliconix, N-Channel 100V 75A (Tc) 166W (Tc) Surface Mount D²PAK (TO-263), Automotive, AEC-Q101, TrenchFET®	View
	CSD16322Q5	Texas Instruments, N-Channel 25V 21A (Ta), 97A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View
	STW45N60DM2AG	STMicroelectronics, N-Channel 600V 34A (Tc) 250W (Tc) Through Hole TO-247, Automotive, AEC-Q101, MDmesh™ DM2	View
	SI8808DB-T2-E1	Vishay Siliconix, N-Channel 30V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®	View
	RCX081N20	Rohm Semiconductor, N-Channel 200V 8A (Tc) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM,	View
	IPB090N06N3GATMA1	Infineon Technologies, N-Channel 60V 50A (Tc) 71W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	FDMC2674	ON Semiconductor, N-Channel 220V 1A (Ta), 7A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3), UniFET™	View
	IXFP22N65X2	IXYS, N-Channel 650V 22A (Tc) 390W (Tc) Through Hole TO-220, HiPerFET™	View
	IRFR1018ETRPBF	Infineon Technologies, N-Channel 60V 56A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®	View
	NVTFS5C478NLWFTAG	ON Semiconductor, N-Channel 40V 26A (Tc) 20W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View

SI8416DB-T2-E1 - Tags

SI8416DB-T2-E1 SI8416DB-T2-E1 PDF SI8416DB-T2-E1 datasheet SI8416DB-T2-E1 specification SI8416DB-T2-E1 image SI8416DB-T2-E1 India Renesas Electronics India SI8416DB-T2-E1 buy SI8416DB-T2-E1 SI8416DB-T2-E1 price SI8416DB-T2-E1 distributor SI8416DB-T2-E1 supplier SI8416DB-T2-E1 wholesales