IRF200S234
IRF200S234
Part Number IRF200S234 Description TRENCH_MOSFETS Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 200V 90A 417W (Tc) Surface Mount D2PAK
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IRF200S234 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRF200S234 Standard Package 1 Manufacturer Infineon Technologies Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 90A Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 16.9mOhm @ 51A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 162nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6484pF @ 50V FET Feature - Power Dissipation (Max) 417W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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