EPC8009
EPC8009
Part Number EPC8009 Manufacturer EPC Description GANFET TRANS 65V 2.7A BUMPED DIE Package / Case DieUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 65V 2.7A (Ta) Surface Mount Die
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EPC8009 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet EPC8009 Datasheet Standard Package 1 Manufacturer EPC Series eGaN® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 65V Current - Continuous Drain (Id) @ 25°C 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 130mOhm @ 500mA, 5V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.45nC @ 5V Vgs (Max) +6V, -4V Input Capacitance (Ciss) (Max) @ Vds 52pF @ 32.5V FET Feature - Power Dissipation (Max) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Die Package / Case Die
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EPC8009 - Tags
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