EPC8009
EPC8009
Part Number EPC8009
Manufacturer EPC
Description GANFET TRANS 65V 2.7A BUMPED DIE
Package / Case Die
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Detailed Description N-Channel 65V 2.7A (Ta) Surface Mount Die
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EPC8009 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet EPC8009 Datasheet
Standard Package 1
Manufacturer EPC
Series eGaN®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 65V
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 130mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.45nC @ 5V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 52pF @ 32.5V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
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EPC8009 - Tags