TP65H050WS
TP65H050WS
Part Number TP65H050WS Description GANFET N-CH 650V 34A TO247-3 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 34A (Tc) 119W (Tc) Through Hole TO-247-3
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TP65H050WS - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TP65H050WS Standard Package 30 Manufacturer Transphorm Series - Packaging Tube Part Status Active FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 34A (Tc) Drive Voltage (Max Rds On, Min Rds On) 12V Rds On (Max) @ Id, Vgs 60mOhm @ 22A, 10V Vgs(th) (Max) @ Id 4.8V @ 700µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 400V FET Feature - Power Dissipation (Max) 119W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3
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