EPC2019
EPC2019
Part Number EPC2019 Manufacturer EPC Description GAN TRANS 200V 8.5A BUMPED DIE Package / Case DieUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 200V 8.5A (Ta) Surface Mount Die
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EPC2019 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet EPC2019 Datasheet Standard Package 1 Manufacturer EPC Series eGaN® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 50mOhm @ 7A, 5V Vgs(th) (Max) @ Id 2.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 5V Vgs (Max) +6V, -4V Input Capacitance (Ciss) (Max) @ Vds 270pF @ 100V FET Feature - Power Dissipation (Max) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Die Package / Case Die
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EPC2019 - Tags
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