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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK962R8-60E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 92nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 15600pF @ 25V
FET Feature -
Power Dissipation (Max) 324W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS3206TRRPBF
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BUK7628-100A,118
Nexperia USA Inc., N-Channel 100V 47A (Tc) 166W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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Taiwan Semiconductor Corporation, N-Channel 30V 5.5A (Tc) 1.8W (Tc) Surface Mount SOT-23,
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CSD19538Q3A
Texas Instruments, N-Channel 100V 15A (Ta) 2.8W (Ta), 23W (Tc) Surface Mount 8-VSONP (3x3.15), NexFET™
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IPD110N12N3GATMA1
Infineon Technologies, N-Channel 120V 75A (Tc) 136W (Tc) Surface Mount PG-TO252-3, OptiMOS™
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