Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI7172DP-T1-GE3

SI7172DP-T1-GE3

SI7172DP-T1-GE3

Part NumberSI7172DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 200V 25A PPAK SO-8

DatasheetSI7172DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 25A (Tc) 5.4W (Ta), 96W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SI7172DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI7172DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI7172DP-T1-GE3.
We are offering SI7172DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI7172DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI7172DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	70mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	77nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2250pF @ 100V
FET Feature	-
Power Dissipation (Max)	5.4W (Ta), 96W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SI7172DP-T1-GE3 - Related Products

	DMN10H100SK3-13	Diodes Incorporated, N-Channel 100V 18A (Tc) 37W (Tc) Surface Mount TO-252,	View
	TSM10N80CI C0G	Taiwan Semiconductor Corporation, N-Channel 800V 9.5A (Tc) 48W (Tc) Through Hole ITO-220AB,	View
	2N7002-T1-GE3	Vishay Siliconix, N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount TO-236,	View
	IPI60R125CPXKSA1	Infineon Technologies, N-Channel 650V 25A (Tc) 208W (Tc) Through Hole PG-TO262-3, CoolMOS™	View
	RS1E280GNTB	Rohm Semiconductor, N-Channel 30V 28A (Ta) 3W (Ta), 31W (Tc) Surface Mount 8-HSOP,	View
	AOD444	Alpha & Omega Semiconductor Inc., N-Channel 60V 4A (Ta), 12A (Tc) 2.1W (Ta), 20W (Tc) Surface Mount TO-252, (D-Pak),	View
	2N7000	ON Semiconductor, N-Channel 60V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3,	View
	IPD95R2K0P7ATMA1	Infineon Technologies, N-Channel 950V 4A (Tc) 37W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7	View
	RUU002N05T106	Rohm Semiconductor, N-Channel 50V 200mA (Ta) 200mW (Ta) Surface Mount UMT3,	View
	FDB2572	ON Semiconductor, N-Channel 150V 4A (Ta), 29A (Tc) 135W (Tc) Surface Mount TO-263AB, PowerTrench®	View
	IRLB4030PBF	Infineon Technologies, N-Channel 100V 180A (Tc) 370W (Tc) Through Hole TO-220AB, HEXFET®	View
	SIRA52ADP-T1-RE3	Vishay Siliconix, N-Channel 40V 41.6A (Ta), 131A (Tc) 4.8W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View

SI7172DP-T1-GE3 - Tags

SI7172DP-T1-GE3 SI7172DP-T1-GE3 PDF SI7172DP-T1-GE3 datasheet SI7172DP-T1-GE3 specification SI7172DP-T1-GE3 image SI7172DP-T1-GE3 India Renesas Electronics India SI7172DP-T1-GE3 buy SI7172DP-T1-GE3 SI7172DP-T1-GE3 price SI7172DP-T1-GE3 distributor SI7172DP-T1-GE3 supplier SI7172DP-T1-GE3 wholesales