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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFB3207ZPbF, IRFS(L)3207ZPbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.1mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6920pF @ 50V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STD3NK50ZT4
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TK8P60W5,RVQ
Toshiba Semiconductor and Storage, N-Channel 600V 8A (Ta) 80W (Tc) Surface Mount DPAK, DTMOSIV
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SIHG065N60E-GE3
Vishay Siliconix, N-Channel 600V 40A (Tc) 250W (Tc) Through Hole TO-247AC,
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TSM110NB04LCR RLG
Taiwan Semiconductor Corporation, N-Channel 40V 12A (Ta), 54A (Tc) 3.1W (Ta), 68W (Tc) Surface Mount 8-PDFN (5x6),
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SIR440DP-T1-GE3
Vishay Siliconix, N-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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SIHJ8N60E-T1-GE3
Vishay Siliconix, N-Channel 600V 8A (Tc) 89W (Tc) Surface Mount PowerPAK® SO-8,
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IPW65R099C6FKSA1
Infineon Technologies, N-Channel 650V 38A (Tc) 278W (Tc) Through Hole PG-TO247-3, CoolMOS™
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APT77N60JC3
Microsemi Corporation, N-Channel 600V 77A (Tc) 568W (Tc) Chassis Mount ISOTOP®,
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STD16N65M5
STMicroelectronics, N-Channel 650V 12A (Tc) 90W (Tc) Surface Mount DPAK, MDmesh™ V
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FDMC8854
ON Semiconductor, N-Channel 30V 15A (Tc) 2W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®
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FDMC7680
ON Semiconductor, N-Channel 30V 14.8A (Ta) 2.3W (Ta), 31W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®
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STP16NF06L
STMicroelectronics, N-Channel 60V 16A (Tc) 45W (Tc) Through Hole TO-220AB, STripFET™ II
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