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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFB3207ZPbF, IRFS(L)3207ZPbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.1mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6920pF @ 50V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN012-60YS,115
Nexperia USA Inc., N-Channel 60V 59A (Tc) 89W (Tc) Surface Mount LFPAK56, Power-SO8,
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IRFB3207ZPBF
Infineon Technologies, N-Channel 75V 120A (Tc) 300W (Tc) Through Hole TO-220AB, HEXFET®
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PMV100ENEAR
Nexperia USA Inc., N-Channel 30V 3A (Ta) 460mW (Ta), 4.5W (Tc) Surface Mount TO-236AB, Automotive, AEC-Q101
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SSM3K59CTB,L3F
Toshiba Semiconductor and Storage, N-Channel 40V 2A (Ta) 1W (Ta) Surface Mount CST3B, U-MOSVII-H
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RK7002BMT116
Rohm Semiconductor, N-Channel 60V 250mA (Ta) 200mW (Ta) Surface Mount SST3,
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BSS127S-7
Diodes Incorporated, N-Channel 600V 50mA (Ta) 610mW (Ta) Surface Mount SOT-23,
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TK55S10N1,LQ
Toshiba Semiconductor and Storage, N-Channel 100V 55A (Ta) 157W (Tc) Surface Mount DPAK+, U-MOSVIII-H
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CSD19534KCS
Texas Instruments, N-Channel 100V 100A (Ta) 118W (Tc) Through Hole TO-220-3, NexFET™
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R5016FNJTL
Rohm Semiconductor, N-Channel 500V 16A (Tc) 50W (Tc) Surface Mount LPTS,
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DMN62D1LFD-7
Diodes Incorporated, N-Channel 60V 400mA (Ta) 500mW (Ta) Surface Mount X1-DFN1212-3,
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IPB016N06L3GATMA1
Infineon Technologies, N-Channel 60V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7, OptiMOS™
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CSD16408Q5
Texas Instruments, N-Channel 25V 22A (Ta), 113A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6), NexFET™
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