IPP65R225C7XKSA1
IPP65R225C7XKSA1
Part Number IPP65R225C7XKSA1
Description MOSFET N-CH 650V 11A TO-220-3
Package / Case TO-220-3
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Lead Time To be Confirmed
Detailed Description N-Channel 650V 11A (Tc) 63W (Tc) Through Hole PG-TO220-3
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IPP65R225C7XKSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPP65R225C7
Standard Package 500
Manufacturer Infineon Technologies
Series CoolMOS™ C7
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 225mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id 4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 996pF @ 400V
FET Feature -
Power Dissipation (Max) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
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