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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK762R9-40E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 79nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6200pF @ 25V
FET Feature -
Power Dissipation (Max) 234W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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PSMN3R0-30YLDX
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TSM60N600CP ROG
Taiwan Semiconductor Corporation, N-Channel 600V 8A (Tc) 83W (Tc) Surface Mount TO-252, (D-Pak),
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ON Semiconductor, N-Channel 60V 11.2A (Ta) 3.7W (Ta), 107W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
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Infineon Technologies, N-Channel 40V 80A (Tc) 94W (Tc) Through Hole PG-TO220-3-1, OptiMOS™
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PSMN013-80YS,115
Nexperia USA Inc., N-Channel 80V 60A (Tc) 106W (Tc) Surface Mount LFPAK56, Power-SO8,
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IXFX64N60Q3
IXYS, N-Channel 600V 64A (Tc) 1250W (Tc) Through Hole PLUS247™-3, HiPerFET™
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