Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB22N60ET1-GE3

SIHB22N60ET1-GE3

SIHB22N60ET1-GE3

Part NumberSIHB22N60ET1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 21A TO263

DatasheetSiHB22N60E

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 21A (Tc) 227W (Tc) Surface Mount TO-263 (D²Pak)

To learn about the specification of SIHB22N60ET1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB22N60ET1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB22N60ET1-GE3.
We are offering SIHB22N60ET1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB22N60ET1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiHB22N60E
Standard Package	800
Manufacturer	Vishay Siliconix
Series	E
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	86nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1920pF @ 100V
FET Feature	-
Power Dissipation (Max)	227W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D²Pak)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB22N60ET1-GE3 - Related Products

	BSC016N04LSGATMA1	Infineon Technologies, N-Channel 40V 31A (Ta), 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	SQJ476EP-T1_GE3	Vishay Siliconix, N-Channel 100V 23A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	IXTT4N150HV	IXYS, N-Channel 1500V 4A (Tc) 280W (Tc) Surface Mount TO-268,	View
	RQ3E080GNTB	Rohm Semiconductor, N-Channel 30V 8A (Ta) 2W (Ta), 15W (Tc) Surface Mount 8-HSMT (3.2x3),	View
	CEDM7004VL TR	Central Semiconductor Corp, N-Channel 30V 450mA (Ta) 100mW (Ta) Surface Mount SOT-883VL,	View
	IPB081N06L3GATMA1	Infineon Technologies, N-Channel 60V 50A (Tc) 79W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	FQD5N60CTM	ON Semiconductor, N-Channel 600V 2.8A (Tc) 2.5W (Ta), 49W (Tc) Surface Mount D-Pak, QFET®	View
	BSS123LT1G	ON Semiconductor, N-Channel 100V 170mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236),	View
	NTTFS4C13NTAG	ON Semiconductor, N-Channel 30V 7.2A (Ta) 780mW (Ta), 21.5W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	SIA456DJ-T1-GE3	Vishay Siliconix, N-Channel 200V 2.6A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®	View
	RUS100N02TB	Rohm Semiconductor, N-Channel 20V 10A (Ta) 2W (Ta) Surface Mount 8-SOP,	View
	STD6NF10T4	STMicroelectronics, N-Channel 100V 6A (Tc) 30W (Tc) Surface Mount DPAK, STripFET™	View

SIHB22N60ET1-GE3 - Tags

SIHB22N60ET1-GE3 SIHB22N60ET1-GE3 PDF SIHB22N60ET1-GE3 datasheet SIHB22N60ET1-GE3 specification SIHB22N60ET1-GE3 image SIHB22N60ET1-GE3 India Renesas Electronics India SIHB22N60ET1-GE3 buy SIHB22N60ET1-GE3 SIHB22N60ET1-GE3 price SIHB22N60ET1-GE3 distributor SIHB22N60ET1-GE3 supplier SIHB22N60ET1-GE3 wholesales