TK100L60W,VQ
TK100L60W,VQ
Part Number TK100L60W,VQ
Description MOSFET N CH 600V 100A TO3P(L)
Package / Case TO-3PL
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 600V 100A (Ta) 797W (Tc) Through Hole TO-3P(L)
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TK100L60W,VQ - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK100L60W
Standard Package 100
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 360nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 15000pF @ 30V
FET Feature Super Junction
Power Dissipation (Max) 797W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P(L)
Package / Case TO-3PL
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