IXFP4N100Q
IXFP4N100Q
Part Number IXFP4N100Q Manufacturer IXYS Description MOSFET N-CH 1000V 4A TO-220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 1000V 4A (Tc) 150W (Tc) Through Hole TO-220AB
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IXFP4N100Q - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXF(A,P)4N100Q Standard Package 50 Manufacturer IXYS Series HiPerFET™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3Ohm @ 2A, 10V Vgs(th) (Max) @ Id 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 25V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
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