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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK664R4-55C
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 4.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 124nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 7750pF @ 25V
FET Feature -
Power Dissipation (Max) 204W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
DMN53D0LQ-7
Diodes Incorporated, N-Channel 50V 500mA (Ta) 370mW (Ta) Surface Mount SOT-23, Automotive, AEC-Q101
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STP11NM60ND
STMicroelectronics, N-Channel 600V 10A (Tc) 90W (Tc) Through Hole TO-220AB, FDmesh™ II
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CXDM6053N TR
Central Semiconductor Corp, N-Channel 60V 5.3A (Ta) 1.2W (Ta) Surface Mount SOT-89,
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IRFR224TRPBF
Vishay Siliconix, N-Channel 250V 3.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,
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STB24NM60N
STMicroelectronics, N-Channel 600V 17A (Tc) 125W (Tc) Surface Mount D2PAK, MDmesh™ II
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IPB600N25N3GATMA1
Infineon Technologies, N-Channel 250V 25A (Tc) 136W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
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IRF5802TRPBF
Infineon Technologies, N-Channel 150V 900mA (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®
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FQPF27N25
ON Semiconductor, N-Channel 250V 14A (Tc) 55W (Tc) Through Hole TO-220F, QFET®
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STD30N10F7
STMicroelectronics, N-Channel 100V 32A (Tc) 50W (Tc) Surface Mount DPAK, DeepGATE™, STripFET™ VII
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RCJ300N20TL
Rohm Semiconductor, N-Channel 200V 30A (Tc) 1.56W (Ta), 40W (Tc) Surface Mount LPTS,
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BUK9M6R6-30EX
Nexperia USA Inc., N-Channel 30V 70A (Tc) 75W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101, TrenchMOS™
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TSM4N90CI C0G
Taiwan Semiconductor Corporation, N-Channel 900V 4A (Tc) 38.7W (Tc) Through Hole ITO-220AB,
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