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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR3710ZPbF, IRFU3710ZPbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2930pF @ 25V
FET Feature -
Power Dissipation (Max) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
CSD18532NQ5BT
Texas Instruments, N-Channel 60V 100A (Ta) 3.1W (Ta), 156W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™
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CSD17579Q3A
Texas Instruments, N-Channel 30V 20A (Ta) 3.2W (Ta), 29W (Tc) Surface Mount 8-VSONP (3x3.15), NexFET™
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IRFB3207PBF
Infineon Technologies, N-Channel 75V 170A (Tc) 330W (Tc) Through Hole TO-220AB, HEXFET®
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SQM40010EL_GE3
Vishay Siliconix, N-Channel 40V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263), Automotive, AEC-Q101, TrenchFET®
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RCX051N25
Rohm Semiconductor, N-Channel 250V 5A (Tc) 2.23W (Ta), 30W (Tc) Through Hole TO-220FM,
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DMN10H120SFG-7
Diodes Incorporated, N-Channel 100V 3.8A (Ta) 1W (Ta) Surface Mount PowerDI3333-8,
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NTA4153NT3G
ON Semiconductor, N-Channel 20V 915mA (Ta) 300mW (Tj) Surface Mount SC-75, SOT-416,
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TK22E10N1,S1X
Toshiba Semiconductor and Storage, N-Channel 100V 52A (Tc) 72W (Tc) Through Hole TO-220, U-MOSVIII-H
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IPD50N04S408ATMA1
Infineon Technologies, N-Channel 40V 50A (Tc) 46W (Tc) Surface Mount PG-TO252-3-313, OptiMOS™
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FDPF12N50T
ON Semiconductor, N-Channel 500V 11.5A (Tc) 42W (Tc) Through Hole TO-220F, UniFET™
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SIHB120N60E-GE3
Vishay Siliconix, N-Channel 600V 25A (Tc) 179W (Tc) Surface Mount D²PAK (TO-263),
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FDPF51N25RDTU
ON Semiconductor, N-Channel 250V 51A (Tc) 38W (Tc) Through Hole TO-220F (LG-Formed),
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