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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR3710ZPbF, IRFU3710ZPbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2930pF @ 25V
FET Feature -
Power Dissipation (Max) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SIRA80DP-T1-RE3
Vishay Siliconix, N-Channel 30V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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PSMN6R0-30YLB,115
Nexperia USA Inc., N-Channel 30V 71A (Tc) 58W (Tc) Surface Mount LFPAK56, Power-SO8,
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SUD25N15-52-E3
Vishay Siliconix, N-Channel 150V 25A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
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ZVN4306GTA
Diodes Incorporated, N-Channel 60V 2.1A (Ta) 3W (Ta) Surface Mount SOT-223,
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IPB200N25N3GATMA1
Infineon Technologies, N-Channel 250V 64A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
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SIRA88DP-T1-GE3
Vishay Siliconix, N-Channel 30V 45.5A (Tc) 25W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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DMT10H010LK3-13
Diodes Incorporated, N-Channel 100V 68.8A (Tc) 3W (Ta) Surface Mount TO-252, (D-Pak),
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DMN3051L-7
Diodes Incorporated, N-Channel 30V 5.8A (Ta) 700mW (Ta) Surface Mount SOT-23-3,
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NDTL03N150CG
ON Semiconductor, N-Channel 1500V 2.5A (Ta) 2.5W (Ta), 140W (Tc) Through Hole TO-3P(L),
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DMT10H015LSS-13
Diodes Incorporated, N-Channel 100V 8.3A (Ta) 1.2W (Ta) Surface Mount 8-SO,
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IPW65R037C6FKSA1
Infineon Technologies, N-Channel 650V 83.2A (Tc) 500W (Tc) Through Hole PG-TO247-3, CoolMOS™ C6
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DMN65D8LQ-7
Diodes Incorporated, N-Channel 60V 310mA (Ta) 370mW (Ta) Surface Mount SOT-23,
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