Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPB083N10N3GATMA1

IPB083N10N3GATMA1

IPB083N10N3GATMA1

Part NumberIPB083N10N3GATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 80A TO263-3

DatasheetIPx08xN10N3 G

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 80A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263AB)

To learn about the specification of IPB083N10N3GATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB083N10N3GATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB083N10N3GATMA1.
We are offering IPB083N10N3GATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPB083N10N3GATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPx08xN10N3 G
Standard Package	1000
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	8.3mOhm @ 73A, 10V
Vgs(th) (Max) @ Id	3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3980pF @ 50V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263AB)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB083N10N3GATMA1 - Related Products

	R5011FNJTL	Rohm Semiconductor, N-Channel 500V 11A (Tc) 50W (Tc) Surface Mount LPTS,	View
	STP6NK90Z	STMicroelectronics, N-Channel 900V 5.8A (Tc) 140W (Tc) Through Hole TO-220AB, SuperMESH™	View
	NTD5865NLT4G	ON Semiconductor, N-Channel 60V 46A (Tc) 71W (Tc) Surface Mount DPAK,	View
	FDB12N50TM	ON Semiconductor, N-Channel 500V 11.5A (Tc) 165W (Tc) Surface Mount D²PAK, UniFET™	View
	BUK9Y41-80E,115	Nexperia USA Inc., N-Channel 80V 24A (Tc) 64W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	FQPF13N06L	ON Semiconductor, N-Channel 60V 10A (Tc) 24W (Tc) Through Hole TO-220F, QFET®	View
	STD2N105K5	STMicroelectronics, N-Channel 1050V 1.5A (Tc) 60W (Tc) Surface Mount DPAK, MDmesh™ K5	View
	TK7J90E,S1E	Toshiba Semiconductor and Storage, N-Channel 900V 7A (Ta) 200W (Tc) Through Hole TO-3P(N), π-MOSVIII	View
	STP34NM60ND	STMicroelectronics, N-Channel 600V 29A (Tc) 190W (Tc) Through Hole TO-220, FDmesh™ II	View
	FQB30N06LTM	ON Semiconductor, N-Channel 60V 32A (Tc) 3.75W (Ta), 79W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View
	PSMN2R6-60PSQ	Nexperia USA Inc., N-Channel 60V 150A (Tc) 326W (Tc) Through Hole TO-220AB,	View
	CSD18512Q5B	Texas Instruments, N-Channel 40V 211A (Tc) 139W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View

IPB083N10N3GATMA1 - Tags

IPB083N10N3GATMA1 IPB083N10N3GATMA1 PDF IPB083N10N3GATMA1 datasheet IPB083N10N3GATMA1 specification IPB083N10N3GATMA1 image IPB083N10N3GATMA1 India Renesas Electronics India IPB083N10N3GATMA1 buy IPB083N10N3GATMA1 IPB083N10N3GATMA1 price IPB083N10N3GATMA1 distributor IPB083N10N3GATMA1 supplier IPB083N10N3GATMA1 wholesales