BSC196N10NSGATMA1
BSC196N10NSGATMA1
Part Number BSC196N10NSGATMA1 Description MOSFET N-CH 100V 45A TDSON-8 Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 8.5A (Ta), 45A (Tc) 78W (Tc) Surface Mount PG-TDSON-8-1
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BSC196N10NSGATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSC196N10NS G Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 8.5A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 19.6mOhm @ 45A, 10V Vgs(th) (Max) @ Id 4V @ 42µA Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 50V FET Feature - Power Dissipation (Max) 78W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-1 Package / Case 8-PowerTDFN
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