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TPWR8004PL,L1Q


TPWR8004PL,L1Q

Part NumberTPWR8004PL,L1Q

Manufacturer

Description

Datasheet

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

TPWR8004PL,L1Q - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package5000
ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSIX-H
PackagingTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs0.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs103nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9600pF @ 20V
FET Feature-
Power Dissipation (Max)1W (Ta), 170W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-DSOP Advance
Package / Case8-PowerVDFN

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TPWR8004PL,L1Q - Tags

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