FQD1N80TM
FQD1N80TM
Part Number FQD1N80TM Description MOSFET N-CH 800V 1A DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 800V 1A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount D-Pak
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FQD1N80TM - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQD1N80, FQU1N80 Standard Package 1 Manufacturer ON Semiconductor Series QFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 20Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 195pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 45W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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