SIHU6N62E-GE3
SIHU6N62E-GE3
Part Number SIHU6N62E-GE3 Description MOSFET N-CH 620V 6A TO-251 Package / Case TO-251-3 Short Leads, IPak, TO-251AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 620V 6A (Tc) 78W (Tc) Through Hole IPAK (TO-251)
To learn about the specification of SIHU6N62E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHU6N62E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHU6N62E-GE3.
We are offering SIHU6N62E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIHU6N62E-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIHU6N62E-GE3 Standard Package 75 Manufacturer Vishay Siliconix Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 620V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 900mOhm @ 3A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 578pF @ 100V FET Feature - Power Dissipation (Max) 78W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package IPAK (TO-251) Package / Case TO-251-3 Short Leads, IPak, TO-251AA
SIHU6N62E-GE3 - Related ProductsMore >>
IXFH24N80P IXYS, N-Channel 800V 24A (Tc) 650W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™, PolarHT™
View
NTMTS0D6N04CTXG ON Semiconductor, N-Channel 40V 533A (Tc) 5W,
View
IRFB3307PBF Infineon Technologies, N-Channel 75V 130A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®
View
FQD16N25CTM ON Semiconductor, N-Channel 250V 16A (Tc) 160W (Tc) Surface Mount D-Pak, QFET®
View
STW14NK50Z STMicroelectronics, N-Channel 500V 14A (Tc) 150W (Tc) Through Hole TO-247-3, SuperMESH™
View
BSP296NH6327XTSA1 Infineon Technologies, N-Channel 100V 1.2A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, OptiMOS™
View
RJK0855DPB-00#J5 Renesas Electronics America, N-Channel 80V 30A (Ta) 60W (Tc) Surface Mount LFPAK,
View
SSM3K16CT,L3F Toshiba Semiconductor and Storage, N-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount CST3, π-MOSIV
View
STD16NF06T4 STMicroelectronics, N-Channel 60V 16A (Tc) 40W (Tc) Surface Mount DPAK, STripFET™ II
View
FDA20N50F ON Semiconductor, N-Channel 500V 22A (Tc) 388W (Tc) Through Hole TO-3PN, UniFET™
View
SIHP28N60EF-GE3 Vishay Siliconix, N-Channel 600V 28A (Tc) 250W (Tc) Through Hole TO-220AB,
View
FQB50N06LTM ON Semiconductor, N-Channel 60V 52.4A (Tc) 3.75W (Ta), 121W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
View
SIHU6N62E-GE3 - Tags
English
