BSC105N10LSFGATMA1
BSC105N10LSFGATMA1
Part Number BSC105N10LSFGATMA1
Description MOSFET N-CH 100V 90A TDSON-8
Package / Case 8-PowerTDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 100V 11.4A (Ta), 90A (Tc) 156W (Tc) Surface Mount PG-TDSON-8-1
To learn about the specification of BSC105N10LSFGATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSC105N10LSFGATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSC105N10LSFGATMA1.
We are offering BSC105N10LSFGATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
BSC105N10LSFGATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSC105N10LSF G
Standard Package 1
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT)
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 11.4A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 50V
FET Feature -
Power Dissipation (Max) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN
BSC105N10LSFGATMA1 - Related ProductsMore >>
RCX160N20
Rohm Semiconductor, N-Channel 200V 16A (Tc) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM,
View
ZVN2110ASTZ
Diodes Incorporated, N-Channel 100V 320mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible),
View
IRFB41N15DPBF
Infineon Technologies, N-Channel 150V 41A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®
View
STP20N90K5
STMicroelectronics, N-Channel 900V 20A (Tc) 250W (Tc) Through Hole TO-220, MDmesh™ K5
View
SPA02N80C3XKSA1
Infineon Technologies, N-Channel 800V 2A (Tc) 30.5W (Tc) Through Hole PG-TO220-FP, CoolMOS™
View
ZXMN2B14FHTA
Diodes Incorporated, N-Channel 20V 3.5A (Ta) 1W (Ta) Surface Mount SOT-23-3,
View
CSD16408Q5
Texas Instruments, N-Channel 25V 22A (Ta), 113A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6), NexFET™
View
TSM4NB65CI C0G
Taiwan Semiconductor Corporation, N-Channel 650V 4A (Tc) 70W (Tc) Through Hole ITO-220AB,
View
CSD16342Q5A
Texas Instruments, N-Channel 25V 100A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6), NexFET™
View
SQ1440EH-T1_GE3
Vishay Siliconix, N-Channel 60V 1.7A (Tc) 3.3W (Tc) Surface Mount SC-70-6, Automotive, AEC-Q101, TrenchFET®
View
SUD50N03-06AP-E3
Vishay Siliconix, N-Channel 30V 90A (Tc) 10W (Ta), 83W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
View
DMN21D2UFB-7B
Diodes Incorporated, N-Channel 20V 760mA (Ta) 380mW (Ta) Surface Mount 3-DFN1006 (1.0x0.6),
View
BSC105N10LSFGATMA1 - Tags