Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXFN32N100Q3

IXFN32N100Q3

IXFN32N100Q3

Part NumberIXFN32N100Q3

ManufacturerIXYS

DescriptionMOSFET N-CH 1000V 28A SOT-227

DatasheetIXFN32N100Q3

Package / CaseSOT-227-4, miniBLOC

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 28A (Tc) 780W (Tc) Chassis Mount SOT-227B

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IXFN32N100Q3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXFN32N100Q3
Standard Package	10
Manufacturer	IXYS
Series	HiPerFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	320mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	195nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	9940pF @ 25V
FET Feature	-
Power Dissipation (Max)	780W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227B
Package / Case	SOT-227-4, miniBLOC

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IXFN32N100Q3 - Tags

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