SISS70DN-T1-GE3


SISS70DN-T1-GE3

Part NumberSISS70DN-T1-GE3

Manufacturer

Description

Datasheet

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SISS70DN-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)125V
Current - Continuous Drain (Id) @ 25°C8.5A (Ta), 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs29.8mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15.3nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds535pF @ 62.5V
FET Feature-
Power Dissipation (Max)5.1W (Ta), 65.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8S (3.3x3.3)
Package / CasePowerPAK® 1212-8S

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