BSC026N02KSGAUMA1
BSC026N02KSGAUMA1
Part Number BSC026N02KSGAUMA1 Description MOSFET N-CH 20V 100A TDSON-8 Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 20V 25A (Ta), 100A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount PG-TDSON-8-1
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BSC026N02KSGAUMA1 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSC026N02KS G Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 25A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 2.6mOhm @ 50A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs 52.7nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 7800pF @ 10V FET Feature - Power Dissipation (Max) 2.8W (Ta), 78W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-1 Package / Case 8-PowerTDFN
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