IXTP1N100
IXTP1N100
Part Number IXTP1N100
Manufacturer IXYS
Description MOSFET N-CH 1000V 1.5A TO-220AB
Package / Case TO-220-3
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Lead Time To be Confirmed
Detailed Description N-Channel 1000V 1.5A (Tc) 54W (Tc) Through Hole TO-220AB
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IXTP1N100 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXT(A,P)1N100
Standard Package 50
Manufacturer IXYS
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
FET Feature -
Power Dissipation (Max) 54W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
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