IXTP1N100
IXTP1N100
Part Number IXTP1N100 Manufacturer IXYS Description MOSFET N-CH 1000V 1.5A TO-220AB Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 1000V 1.5A (Tc) 54W (Tc) Through Hole TO-220AB
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IXTP1N100 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXT(A,P)1N100 Standard Package 50 Manufacturer IXYS Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 11Ohm @ 1A, 10V Vgs(th) (Max) @ Id 4.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V FET Feature - Power Dissipation (Max) 54W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
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