Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IRFB4410ZGPBF

IRFB4410ZGPBF

IRFB4410ZGPBF

Part NumberIRFB4410ZGPBF

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 97A TO-220AB

DatasheetIRFB4410ZGPbF

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 97A (Tc) 230W (Tc) Through Hole TO-220AB

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IRFB4410ZGPBF - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRFB4410ZGPbF
Standard Package	50
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	97A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	9mOhm @ 58A, 10V
Vgs(th) (Max) @ Id	4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4820pF @ 50V
FET Feature	-
Power Dissipation (Max)	230W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

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