Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFR193
Standard Package	1
Manufacturer	Infineon Technologies
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	8GHz
Noise Figure (dB Typ @ f)	1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain	10dB ~ 15dB
Power - Max	580mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 30mA, 8V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3
Base Part Number	BFR193

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BFU725F/N1,115	NXP USA Inc., RF Transistor NPN 2.8V 40mA 55GHz 136mW Surface Mount 4-SO,	View
2SC5084-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 150mW Surface Mount S-Mini,	View
BFP420FH6327XTSA1	Infineon Technologies, RF Transistor NPN 5.5V 35mA 25GHz 160mW Surface Mount 4-TSFP,	View
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MMBT5179	ON Semiconductor, RF Transistor NPN 12V 50mA 2GHz 225mW Surface Mount SOT-23-3 (TO-236),	View

BFR193E6327HTSA1

Part NumberBFR193E6327HTSA1