Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFR193
Standard Package	1
Manufacturer	Infineon Technologies
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	8GHz
Noise Figure (dB Typ @ f)	1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain	10dB ~ 15dB
Power - Max	580mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 30mA, 8V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3
Base Part Number	BFR193

BFR93AWH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 90mA 6GHz 300mW Surface Mount PG-SOT323-3,	View
MMBTH10RG	ON Semiconductor, RF Transistor NPN 40V 50mA 450MHz 225mW Surface Mount SOT-23-3,	View
BFP840FESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 2.6V 35mA 85GHz 75mW Surface Mount 4-TSFP,	View
2SC5227A-4-TB-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP,	View
MT3S111P(TE12L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 6V 100mA 8GHz 1W Surface Mount PW-MINI,	View
BFR182WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 35mA 8GHz 250mW Surface Mount PG-SOT323-3,	View
BFQ18A,115	NXP USA Inc., RF Transistor NPN 18V 150mA 4GHz 1W Surface Mount SOT-89-3,	View
BFP640H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.5V 50mA 40GHz 200mW Surface Mount PG-SOT343-4,	View
MT3S111P(TE12L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 6V 100mA 8GHz 1W Surface Mount PW-MINI,	View
BFP780H6327XTSA1	Infineon Technologies, RF Transistor NPN 6.1V 120mA 900MHz 600mW Surface Mount SOT343-4-2,	View
BFP650H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.5V 150mA 37GHz 500mW Surface Mount PG-SOT343-4,	View
BFU768F,115	NXP USA Inc., RF Transistor NPN 2.8V 70mA 220mW Surface Mount 4-DFP,	View

BFR193E6327HTSA1

Part NumberBFR193E6327HTSA1