Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	RF Discretes Selection Guide
Standard Package	3000
Manufacturer	Infineon Technologies
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	4.5V
Frequency - Transition	40GHz
Noise Figure (dB Typ @ f)	0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Gain	12.5dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	110 @ 30mA, 3V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-82A, SOT-343
Supplier Device Package	PG-SOT343-4
Base Part Number	BFP640

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MT3S113P(TE12L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 5.3V 100mA 7.7GHz 1.6W Surface Mount PW-MINI,	View
BFU730LXZ	NXP USA Inc., RF Transistor NPN 3V 30mA 53GHz 160mW Surface Mount 3-DFN1006 (1.0x0.6),	View
2SC5226A-4-TL-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 150mW Surface Mount 3-MCP,	View
2SC5085-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount USM,	View
BFU710F,115	NXP USA Inc., RF Transistor NPN 2.8V 10mA 43GHz 136mW Surface Mount 4-DFP,	View
BFU580GX	NXP USA Inc., RF Transistor NPN 12V 60mA 11GHz 1W Surface Mount SOT-223,	View
BFS17NTA	Diodes Incorporated, RF Transistor NPN 11V 50mA 3.2GHz 330mW Surface Mount SOT-23-3,	View
BFP650H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.5V 150mA 37GHz 500mW Surface Mount PG-SOT343-4,	View
MT3S113TU,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM,	View
BFP405H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 25mA 25GHz 75mW Surface Mount SOT-343,	View
BFU768F,115	NXP USA Inc., RF Transistor NPN 2.8V 70mA 220mW Surface Mount 4-DFP,	View

BFP640H6327XTSA1

Part NumberBFP640H6327XTSA1