Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFU710F
Standard Package	1
Manufacturer	NXP USA Inc.
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	2.8V
Frequency - Transition	43GHz
Noise Figure (dB Typ @ f)	0.85dB ~ 1.45dB @ 5.8GHz ~ 12GHz
Gain	-
Power - Max	136mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 1mA, 2V
Current - Collector (Ic) (Max)	10mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-343F
Supplier Device Package	4-DFP
Base Part Number	BFU710

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BFU710F,115

Part NumberBFU710F,115