2N7002-T1-GE3


2N7002-T1-GE3

Part Number2N7002-T1-GE3

Manufacturer

Description

Datasheet

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

2N7002-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerVishay Siliconix
Series-
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
FET Feature-
Power Dissipation (Max)200mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-236
Package / CaseTO-236-3, SC-59, SOT-23-3
Base Part Number2N7002

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2N7002-T1-GE3 - Tags

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